Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi

By Yoshio Nishi

New suggestions are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology offers an outline of constructing applied sciences and explores their strengths and weaknesses.

After an summary of the present industry, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half appears on the benefits of designing part swap reminiscence and resistive random entry reminiscence applied sciences. It appears specifically on the fabrication, houses, and function of nanowire part switch reminiscence applied sciences. Later chapters additionally think of modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. ultimately, half 3 seems to be to the way forward for replacement applied sciences. The components coated comprise molecular, polymer, and hybrid natural reminiscence units, and a number of random entry reminiscence units resembling nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technology, and electric engineering. it's a invaluable device for examine and improvement managers taken with electronics, semiconductors, nanotechnology, solid-state thoughts, magnetic fabrics, natural fabrics, and transportable digital devices.

  • Provides an outline of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units resembling these in line with polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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